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Summary:
One of the greatest challenges for quantum devices is to increase their operating temperature to room temperature. Two approaches have been pursued in this goal: a) precise patterning and etching of 2-DEG structures in GaAs, and b) random structures based upon grains in polycrystalline materials and self-assembled quantum dots created in MBE growth. The former approach requires not only much smaller dimensions than realizable by e-beam lithography and etching, but also much greater dimensional uniformity. During the past year, several groups have utilized scanning probes (STM or AFM) to locally induce chemical reactions and oxidize Si, Ti, and other materials with extremely small dimensions (nano-oxidation). We have used this nano-oxidation process to fabricate small Ti islands and create a single electron transistor (SET) based upon Coulomb blockade. This device operates at room temperature with Coulomb steps of 150 meV.
See also: Serguei Komarov, Barden Shimbo.
[1] K. Matsumoto, S. Takahashi, M. Ishii, M. Hoshi, A. Kurokawa, S. Ichimura, and A. Ando, Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials, Yokohama, Japan, 46 (1994).
[2] K. Matsumoto, M. Ishii, J. Shirakashi, K. Segawa, Y. Oka, B. Vartanian, and J. Harris, Comparison of Experimental and Theoretical Results of Room Temperature Operated Single Electron Transistor made by STM/AFM Nano-Oxidation Process, IEDM 1995.
[3] K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. Vartanian, and J. Harris, Room Temperature Operation of Single Electron Transistor Made by STM Nano-Oxidation Process, Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, Osaka, Japan, 192 (1995).
[4] K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. Vartanian, and J. Harris, Room Temperature Operation of Single Electron Transistor made by STM Nano-Oxidation Process for TiOx/Ti System, Applied Physics Letters, 68 (1), 34 (1995).
[5] M. Ishii and K. Matsumoto, Control of Current in 2DEG Channel by Oxide Wire Formed Using AFM, Japanese Journal of Applied Physics, 34 (1-2B), 1329 (1995).
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